Alterations in photosynthetic performance of lutein-deficient mutant lut2 and wild type (wt) of Arabidopsis thaliana were followed after treatment with low temperature and high light for 6 d. The obtained results indicated lower electrolyte leakage, lower excitation pressure, and higher actual photochemical efficiency of PSII in lut2 plants exposed to combined stress compared to wt plants. This implies that lut2 is less susceptible to the applied stress conditions. The observed lower values of quantum efficiency of nonphotochemical quenching and energy-dependent component of nonphotochemical quenching in lut2 suggest that nonphotochemical quenching mechanism(s) localized within LHCII could not be involved in the acquisition of higher stress tolerance of lut2 and alternatives to nonphotochemical quenching mechanisms are involved for dissipation of excess absorbed light. We suggest that the observed enhanced capacity for cyclic electron flow and the higher oxidation state of P700 (P700+), which suggests PSI-dependent energy quenching in lut2 plants may serve as efficient photoprotective mechanisms, thus explaining the lower susceptibility of lut2 to the combined stress treatments.